first-principles investigation of density of states and electron density in wurtzitein0.5ga0.5nalloys with gga-pbesol method

in present work, we have calculated the electronic properties including density of states (dos) and electron density for gan, inn and in wurtzite phase for x=0.5. the study is based on density functional theory (dft) with full potential linearized augmented plane wave method (fp-lapw) by generalized gradient approximation (gga-pbesol) for calculating electronic properties. in this report we concluded that inxga1-xn band gap, which would be decreased with increasing in concentration and gan is very sensitive on in content. in present work, we have calculated the electronic properties including density of states (dos) and electron density for gan, inn and in wurtzite phase for x=0.5. the study is based on density functional theory (dft) with full potential linearized augmented plane wave method (fp-lapw) by generalized gradient approximation (gga-pbesol) for calculating electronic properties. in this report we concluded that inxga1-xn band gap, which would be decreased with increasing in concentration and gan is very sensitive on in content.